55GN01MA no. a1114-1/8 features ? high cut-off frequency : f t =5.5ghz typ ? high gain : ? s21e ? 2 =10db typ (f=1ghz) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 3v collector current i c 70 ma collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 400 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7023a-009 ordering number : ena1114a 71112 tkim/o2908ab msim tc-00001677 55GN01MA npn epitaxial planar silicon transistor uhf wide-band low-noise ampli er applications http:// semicon.sanyo.com/en/network sanyo semiconductors data sheet product & package information ? package : mcp ? jeita, jedec : sc-70, sot-323 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection zd lot no. lot no. tl 1 : base 2 : emitter 3 : collector sanyo : mcp 3 12 2.0 0.425 0.425 0.3 0.65 2.1 0.9 1.25 0.3 0.2 0 to 0.08 0.15 55GN01MA-tl-e 3 2 1
55GN01MA no. a1114-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 0.1 a emitter cutoff current i ebo v eb =2v, i c =0a 1 a dc current gain h fe v ce =5v, i c =10ma 100 180 gain-bandwidth product f t 1v ce =3v, i c =5ma 3.0 4.5 ghz f t 2v ce =5v, i c =20ma 5.5 ghz output capacitance cob v cb =10v, f=1mhz 1.0 1.3 pf reverse transfer capacitance cre 0.6 pf forward transfer gain ? s21e ? 2 v ce =5v, i c =20ma, f=1ghz 7 10 db noise figure nf v ce =3v, i c =5ma, f=1ghz, z o =50 1.9 2.8 db ordering information device package shipping memo 55GN01MA-tl-e mcp 3,000pcs./reel pb free collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce base-to-emitter voltage, v be -- v collector current, i c -- ma i c -- v be h fe -- i c dc current gain, h fe f t -- i c collector current, i c -- ma collector current, i c -- ma gain-bandwidth product, f t -- ghz 012345678910 0 5 10 15 20 25 30 35 40 45 50 it06252 i b =0ma 0.30ma 0.25ma 0.20ma 0.15ma 0.10ma 0.05ma 0 0.2 0.4 0.6 0.8 1.0 1.2 0 80 70 60 50 40 30 20 10 it06253 v ce =5v it06254 100 2 7 5 3 1.0 357 2357 10 23 57 100 v ce =5v 1.0 5 7 10 2 3 1.0 23 57 23 57 10 100 it05670 v ce =5v
55GN01MA no. a1114-3/8 collector dissipation, p c -- mw p c -- ta ambient temperature, ta -- c cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf nf -- i c collector current, i c -- ma noise figure, nf -- db collector current, i c -- ma ? s21e ? 2 -- i c forward transfer gain, ? s21e ? 2 -- db cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 350 400 450 it06251 2 4 12 6 8 10 1.0 23 57 23 57 10 100 it05671 v ce =5v f=1ghz 0.1 23 57 1.0 23 23 55 7 10 5 7 2 5 3 1.0 it05672 3 7 5 5 3 1.0 2 it05673 0.1 23 57 1.0 23 23 57 10 1.0 1.5 3.0 2.0 2.5 1.0 23 57 10 it05674 v ce =3v f=1ghz zo=50 f=1mhz f=1mhz when mounted on ceramic substrate (250mm 2 ? 0.8mm)
55GN01MA no. a1114-4/8 s parameters (common emitter) v ce =5v, i c =5ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.830 -43.97 13.127 147.99 0.038 67.23 0.872 -22.91 200 0.694 -77.62 10.294 125.90 0.060 54.39 0.700 -35.46 400 0.540 -117.92 6.419 101.76 0.081 48.13 0.501 -44.05 600 0.481 -140.06 4.518 88.76 0.095 49.82 0.424 -46.75 800 0.461 -155.07 3.503 78.58 0.111 52.28 0.393 -49.83 1000 0.451 -165.52 2.877 70.19 0.128 54.96 0.381 -53.19 1200 0.445 -174.34 2.452 62.66 0.146 56.81 0.375 -57.17 1400 0.445 178.04 2.147 56.03 0.168 58.15 0.377 -61.74 1600 0.445 171.32 1.918 49.61 0.189 58.43 0.382 -66.69 1800 0.445 164.86 1.737 43.71 0.211 58.38 0.386 -71.55 2000 0.449 158.60 1.595 38.11 0.237 58.17 0.390 -76.75 2200 0.452 152.58 1.467 32.97 0.265 57.40 0.396 -82.35 2400 0.450 146.68 1.363 28.29 0.289 56.02 0.399 -87.23 2600 0.453 141.54 1.274 24.12 0.315 55.05 0.402 -92.59 2800 0.462 136.46 1.198 20.67 0.346 53.73 0.407 -98.30 3000 0.472 131.80 1.143 17.49 0.377 51.74 0.405 -104.52 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.684 -64.81 20.386 135.46 0.033 61.46 0.746 -32.56 200 0.537 -103.63 13.552 113.26 0.046 54.93 0.530 -42.92 400 0.442 -139.55 7.523 93.84 0.066 56.90 0.365 -45.97 600 0.418 -156.47 5.145 83.67 0.087 60.27 0.318 -46.89 800 0.415 -167.86 3.934 75.21 0.109 62.42 0.302 -49.45 1000 0.412 -175.67 3.211 67.90 0.131 63.30 0.299 -52.76 1200 0.411 177.29 2.725 61.28 0.155 63.24 0.299 -56.97 1400 0.415 171.08 2.375 55.21 0.179 62.62 0.304 -61.81 1600 0.418 165.63 2.121 49.25 0.203 61.52 0.311 -66.89 1800 0.419 159.97 1.918 43.74 0.228 60.43 0.315 -71.68 2000 0.424 154.44 1.760 38.40 0.254 58.94 0.320 -76.83 2200 0.429 148.97 1.619 33.44 0.281 57.20 0.326 -82.56 2400 0.427 143.60 1.506 28.88 0.304 55.14 0.329 -86.87 2600 0.431 139.13 1.408 24.76 0.329 53.64 0.334 -92.16 2800 0.441 134.54 1.327 21.16 0.358 51.96 0.339 -97.67 3000 0.451 130.40 1.266 17.89 0.386 49.84 0.338 -103.91 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.527 -90.16 26.224 123.28 0.026 59.94 0.598 -40.43 200 0.438 -127.59 15.340 104.33 0.037 60.44 0.396 -45.63 400 0.399 -155.68 8.065 89.00 0.060 65.69 0.282 -44.29 600 0.393 -167.56 5.453 80.60 0.084 67.76 0.256 -44.57 800 0.397 -176.18 4.149 73.14 0.109 68.31 0.250 -47.52 1000 0.398 177.84 3.379 66.41 0.134 67.71 0.252 -51.39 1200 0.401 172.13 2.862 60.19 0.159 66.77 0.255 -55.96 1400 0.406 166.95 2.491 54.45 0.186 65.32 0.262 -61.04 1600 0.411 162.22 2.222 48.82 0.210 63.20 0.270 -66.49 1800 0.414 157.06 2.008 43.51 0.235 61.52 0.275 -71.29 2000 0.419 152.07 1.840 38.32 0.261 59.51 0.282 -76.53 2200 0.425 146.91 1.693 33.45 0.288 57.59 0.289 -82.27 2400 0.424 141.87 1.574 29.00 0.312 55.28 0.293 -86.65 2600 0.429 137.61 1.472 24.92 0.336 53.54 0.298 -91.76 2800 0.438 133.38 1.387 21.39 0.365 51.63 0.304 -97.07 3000 0.449 129.47 1.321 18.07 0.392 49.39 0.303 -103.60
55GN01MA no. a1114-5/8 s parameters (common emitter) v ce =5v, i c =30ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.461 -105.76 28.111 117.59 0.023 60.62 0.521 -42.88 200 0.412 -139.73 15.717 100.76 0.034 64.40 0.344 -44.71 400 0.393 -162.64 8.133 87.05 0.058 69.84 0.255 -41.81 600 0.394 -172.24 5.483 79.25 0.084 70.67 0.237 -42.42 800 0.400 -179.58 4.169 72.10 0.110 70.59 0.235 -45.80 1000 0.401 175.18 3.392 65.52 0.135 69.45 0.239 -49.94 1200 0.405 169.95 2.870 59.47 0.161 68.00 0.244 -54.75 1400 0.412 165.14 2.496 53.81 0.187 66.24 0.252 -60.09 1600 0.417 160.67 2.226 48.20 0.212 64.03 0.260 -65.80 1800 0.422 155.72 2.010 42.96 0.237 62.33 0.267 -70.89 2000 0.428 150.84 1.841 37.78 0.263 60.20 0.275 -76.12 2200 0.434 145.91 1.692 32.98 0.291 58.16 0.282 -81.97 2400 0.433 140.96 1.574 28.60 0.314 55.69 0.286 -86.52 2600 0.438 136.73 1.469 24.51 0.339 53.89 0.291 -91.68 2800 0.447 132.49 1.384 21.02 0.367 52.12 0.298 -97.10 3000 0.459 128.65 1.319 17.72 0.395 49.72 0.298 -103.63
55GN01MA no. a1114-6/8 embossed taping speci cation 55GN01MA-tl-e
55GN01MA no. a1114-7/8 outline drawing land pattern example 55GN01MA-tl-e mass (g) unit 0.006 * for reference mm unit: mm 0.65 0.65 2.1 0.7 1.0
55GN01MA no. a1114-8/8 ps this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
|
